BC807-16L 데이터 시트보기 (PDF) - ON Semiconductor

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BC807-16L

PNP Silicon General Purpose Transistors

ON Semiconductor 

BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L

TYPICAL CHARACTERISTICS − BC807−40LT1

1000

900

800 150°C

VCE = 1 V

700

600

500 25°C

400

300 −55°C

200

100

0

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 16. DC Current Gain vs. Collector

Current

1.1

1.0

IC/IB = 10

0.9

0.8

0.7

−55°C

25°C

150°C

0.6

0.5

0.4

0.3

0.2

0.0001 0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 18. Base Emitter Saturation Voltage vs.

Collector Current

1000

VCE = 1 V

TA = 25°C

1

IC/IB = 10

0.1

25°C

150°C

−55°C

0.01

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 17. Collector Emitter Saturation Voltage

vs. Collector Current

1.2

1.1 VCE = 5 V

1.0

0.9

−55°C

0.8

0.7

25°C

0.6

0.5

150°C

0.4

0.3

0.2

0.0001 0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 19. Base Emitter Voltage vs. Collector

Current

100

10

0.1

1

10

100

1000

IC, COLLECTOR CURRENT (mA)

Figure 20. Current Gain Bandwidth Product

vs. Collector Current

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