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BC869 데이터 시트보기 (PDF) - Weitron Technology

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BC869
Weitron
Weitron Technology Weitron
BC869 Datasheet PDF : 3 Pages
1 2 3
PNP Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
MAXIMUM RATINGS ( TA=25°C unless otherwise noted)
Rating
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current Continuous
IC
Total Device Dissipation TA=25°C
PD
Junction Temperature Range
TJ
Storage Temperature Range
Tstg
BC869
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
Value
-32
-20
-5.0
-1.0
500
+150
-65 to +150
Unit
V
V
V
A
mW
˚C
˚C
OFF CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage, IC = -0.1mA, IE = 0
Collector-Emitter Breakdown Voltage, IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage, IE = -0.1mA,IC = 0
Collector Cut-o Current, VCB = -25V, IE = 0
Emitter Cut-o Current, VEB = -5.0V, IC = 0
Symbol Min Max
V(BR)CBO -32
-
V(BR)CEO -20
-
V(BR)EBO -5.0
-
ICBO
-
-0.1
IEBO
-
-0.1
Unit
V
V
V
µA
µA
WEITRON
1/3
h t t p : / / w w w . w e i t r o n . c o m . tw
15-Nov-07

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