BCP69-16/DG 데이터 시트보기 (PDF) - NXP Semiconductors.

부품명

상세내역

제조사

BCP69-16/DG

20 V, 1 A PNP medium power transistor

NXP Semiconductors. 

NXP Semiconductors

BCP69

20 V, 1 A PNP medium power transistor

7. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

ICBO

collector-base cut-off VCB = −25 V; IE = 0 A

current

VCB = −25 V; IE = 0 A;

Tj = 150 °C

IEBO

emitter-base cut-off

VEB = −5 V; IC = 0 A

current

hFE

VCEsat

VBE

Cc

DC current gain

BCP69

BCP69-16

BCP69-16/DG

BCP69-16/IN

BCP69-25

collector-emitter

saturation voltage

base-emitter voltage

collector capacitance

VCE = −10 V;

IC = −5 mA

VCE = −1 V;

IC = −500 mA

VCE = −1 V; IC = −1 A

VCE = −1 V;

IC = −500 mA

VCE = −1 V;

IC = −500 mA

VCE = −1 V;

IC = −500 mA

IC = −1 A;

IB = −100 mA

VCE = −10 V;

IC = −5 mA

VCE = −1 V; IC = −1 A

VCB = −10 V;

IE = ie = 0 A;

f = 1 MHz

fT

transition frequency VCE = −5 V;

IC = −50 mA;

f = 100 MHz

Min Typ Max Unit

-

-

−100 nA

-

-

−10 µA

-

-

−100 nA

50

-

85

-

60

-

100 -

140 -

160 -

-

-

-

-

-

-

-

28

-

375

-

250

230

375

−500 mV

−700 mV

−1

V

-

pF

40

140 -

MHz

BCP69_6

Product data sheet

Rev. 06 — 2 December 2008

© NXP B.V. 2008. All rights reserved.

6 of 13

Share Link: