BCW68 데이터 시트보기 (PDF) - Secos Corporation.
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BCW68 Datasheet PDF : 3 Pages
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Elektronische Bauelemente
BCW68
PNP Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complementary to BCW66.
MARKING:
BCW68F:DF
BCW68G:DG
BCW68H:DH
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction & Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
RATINGS
-60
-45
-5
-0.8
0.33
150, -55~150
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Input Capacitance
V(BR)CBO
-60
V(BR)CEO
-45
V(BR)EBO
-5
ICBO
IEBO
BCW68F
35
hFE1 BCW68G
50
BCW68H 80
BCW68F
75
hFE2 BCW68G 120
BCW68H 180
BCW68F 100
hFE3 BCW68G 160
BCW68H 250
BCW68F
35
hFE4 BCW68G
60
BCW68H 100
VCE(sat)
VBE(sat)
fT
COB
CIB
-0.02
-0.02
V IC=-10μA, IE=0
V IC=-10mA, IB=0
V IE=-10μA, IC=0
μA VCB=-45V, IE=0
μA VEB=-4V, IC=0
VCE=-10V, IC=-0.1mA
VCE=-1V, IC=-10mA
250
400
VCE=-1V, IC=-100mA
630
VCE=-2V, IC=-500mA
-0.3
V IC=-100mA, IB=-10mA
-0.7
V IC=-500mA, IB=-50mA
-1.25
V IC=-100mA, IB=-10mA
-2
V IC=-500mA, IB=-50mA
200
MHz VCE=-5V, IC=-50mA,f=20MHz
6
pF VCB=-10V, IE=0,f=1MHz
60
pF VEB=-0.5V,IE=0,f=1MHz
27-Oct-2009 Rev. A
Page 1 of 3
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