BCY58 데이터 시트보기 (PDF) - STMicroelectronics
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BCY58 Datasheet PDF : 6 Pages
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BCY58-BCY59
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
150
°C/W
Max
450
°C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
ICE S
Parameter
Collector Cutoff Current
(VBE = 0)
ICE X
Collector Cutoff Current
(VBE = – 0.2 V)
IEBO
V(BR)CE O *
(BR)EBO *
VCE( sat )*
VBE
Emitter cutoff Current
(IC = 0)
Collector-emitter Breakdown
Voltage (IB = 0)
Emitter-base Breakdown Voltage
(IC = 0)
Collector-Emitter Saturation
Voltage
Base-emitter Voltage
VB E( s at)* Base-emitter Saturation Voltage
hFE*
DC Current Gain
Test Conditions
For BCY58
VCE = 32 V
VCE = 32 V
For BCY59
VCE = 45 V
VCE = 45 V
T amb = 150 °C
T amb = 150 °C
For BCY58
VCE = 32 V
For BCY59
VCE = 45 V
VEB = 5 V
IC = 2 mA
IE = 10 µA
IC = 10 mA
IC = 100 mA
IC = 2 mA
IC = 100 mA
IC = 10 mA
IC = 100 mA
IC =10 µA
IC = 2 mA
IC =10 mA
IC =100 mA
T amb = 100 °C
T amb = 100 °C
For BCY58
For BCY59
IB = 0.25 mA
IB = 2.5 mA
VCE = 5 V
VCE = 1 V
IB = 0.25 mA
IB = 2.5 mA
VCE = 5 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
VCE = 5 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
VCE = 1 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
VCE =1 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
Min.
32
45
7
0.55
0.6
0.75
20
40
100
120
120
180
250
380
80
80
120
160
240
40
40
45
60
60
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Typ.
0.1
0.1
0.1
0.1
0.12
0.4
0.65
0.75
0.7
0.9
195
100
140
195
280
350
170
250
350
500
365
175
260
365
520
Max.
10
10
10
10
20
20
10
0.35
0.7
0.7
0.85
1.2
630
220
310
460
630
Unit
nA
µA
nA
µA
µA
µA
nA
V
V
V
V
V
V
V
V
V
2/6
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