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BCY58 데이터 시트보기 (PDF) - STMicroelectronics

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BCY58
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BCY58 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BCY58-BCY59
ELECTRICAL CHARACTERISTICS (continued)
Symbol
hfe
Parameter
Small Signal Current Gain
fT
Transition Frequency
Test Conditions
I C = 2 mA
f = 1 kHz
VCE = 5 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
I C =10 mA
f = 100 MHz
VCE = 5 V
Min. Typ. Max.
125
125
250
175
350
250
500
350
700
200
CEBO
C CBO
Emitter-base Capacitance
Collector-base Capacitance
IC = 0
f = 1 MHz
IE = 0
f = 1 MHz
VE B = 0.5 V
VCB = 10 V
11 15
3.5
6
NF
Noise Figure
IC = 0.2 mA
Rg = 2 k
VCE = 5 V
f = 1 kHz
ton
Turn-on Time
IC = 10 mA
I B1 = 1 mA
IC = 100 mA
I B1 = 10 mA
VCC = 10 V
VCC = 10 V
toff
Turn-off Time
IC = 10 mA
VCC = 10 V
I B1 = – I B2 = 1 mA
IC = 100 mA
VCC = 10 V
I B1 = – I B2 = 10 mA
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
2
6
85 150
55 150
480 800
480 800
DC Current Gain.
Collector-emitter Saturation Voltage.
Unit
MHz
pF
pF
dB
ns
ns
ns
ns
3/6

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