BCY79(2012) 데이터 시트보기 (PDF) - Comset Semiconductors
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BCY79 Datasheet PDF : 4 Pages
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PNP BCY78 – BCY79
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICES
ICES
IEBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
VBE
Collector Cutoff
Current
Collector Cutoff
Current
VCB =-35 V, VBE =0V
VCB =-25 V, VB =0V
VCB =-35 V
VBE =0V,Tj =150°C
VCB =-25 V
VBE =0V,Tj =150°C
Emitter Cutoff
Current
VBE =-4.0 V, IC =0
Collector Emitter
Breakdown
Voltage
IC =-2 mA, IB =0
Emitter Base
Breakdown
Voltage
IE =-1µA, IC =0
Collector-Emitter
saturation Voltage
IC =-10 mA
IB =-0.25 mA
IC =-100 mA
IB =-2.5 mA
IC =-10 mA
Base-Emitter
I B=-0.25 mA
Saturation Voltage IC =-100 mA
IB =-2.5 mA
IC =-10 µA
VCE =-5 V
Base-Emitter
Voltage
IC =-2 mA
VCE =-5 V
IC =-10 mA
VCE =-1 V
IC =-100 mA
VCE =-1 V
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
-
- -20 nA
-
- -10 µA
-
- -20 nA
-45 -
-32 -
-
-
V
-5
-
-
V
- -0.12 -0.25
- -04 -08
V
-0.6 -0.7 -0.85
-0.7 -0.85 -1.2
- -0.55 -
-0.6 -0.65 -0.75
V
- -0.68 -
- -0.75 -
Symbol
Ratings
hFE
DC Current Gain
hfe
Small-Signal
Current Gain
18/10/2012
Test Condition(s)
IC =-10 µA, VCE =-5 V
IC =-2 mA, VCE =-5 V
IC =-10 mA, VCE =-1 V
IC =-100 mA, VCE =-1 V
IC =2 mA, VC E=5 V
f = 1kHz
BCY79VII
BCY78VII
-
Typ.140
>120
<220
>80
-
>40
>125
<250
BCY79VIII
BCY78VIII
>30
Typ.200
>180
<310
>120
<400
>45
>175
<350
COMSET SEMICONDUCTORS
BCY79IX
BCY78IX
>40
Typ.270
>250
<460
>160
<630
>60
>250
<500
BCY79X
BCY78X
>100
Typ.390
>380
<630
>240
<1000
>60
>350
<700
2/4
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