BD135 데이터 시트보기 (PDF) - SavantIC Semiconductor
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BD135 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD135 BD137 BD139
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
VBE
Base-emitter voltage
IC=500mA ; VCE=2V
ICBO
Collector cut-off current
VCB=30V; IE=0
VCB=30V; IE=0 Tj=125
0.5
V
1.0
V
100
nA
10
µA
IEBO
Emitter cut-off current
hFE-1
hFE-2
hFE-3
DC current gain
DC current gain
BD135-10;BD137-10;BD139-10
BD135-16;BD137-16;BD139-16
DC current gain
fT
Transition frequency
VEB=5V; IC=0
100
nA
IC=5mA ; VCE=2V
40
63
250
IC=150mA ; VCE=2V
63
160
100
250
IC=500mA ; VCE=2V
25
IC=50mA; VCE=5V ;f=100MHz
190
MHz
2
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