BD240C 데이터 시트보기 (PDF) - Bourns, Inc

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BD240C

PNP SILICON POWER TRANSISTORS

Bourns, Inc 

BD240, BD240A, BD240B, BD240C

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the

BD241 Series

● 30 W at 25°C Case Temperature

● 2 A Continuous Collector Current

● 4 A Peak Collector Current

● Customer-Specified Selections Available

TO-220 PACKAGE

(TOP VIEW)

B

1

C

2

E

3

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

Collector-emitter voltage (RBE = 100 Ω)

Collector-emitter voltage (IC = -30 mA)

Emitter-base voltage

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

BD240

BD240A

BD240B

BD240C

BD240

BD240A

BD240B

BD240C

VCER

VCEO

VEBO

IC

ICM

IB

Ptot

Ptot

½LIC2

Tj

Tstg

TL

-55

-70

V

-90

-115

-45

-60

V

-80

-100

-5

V

-2

A

-4

A

-0.6

A

30

W

2

W

32

mJ

-65 to +150

°C

-65 to +150

°C

250

°C

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,

VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.

PRODUCT INFORMATION

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

1

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