BD544A 데이터 시트보기 (PDF) - Inchange Semiconductor

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BD544A

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

DESCRIPTION

·70 W at 25°C Case Temperature

·Complement to Type BD543/A/B/C

·8 A Continuous Collector Current

APPLICATIONS

·Designed for high power audio amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD544

-40

BD544A

-60

VCBO

Collector-Base Voltage

V

BD544B

-80

BD544C -100

BD544

-40

BD544A

-60

VCEO

Collector-Emitter Voltage

V

BD544B

-80

BD544C -100

VEBO

IC

ICM

PC

TJ

Tstg

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Collector Power Dissipation

@ TC=25℃

Collector Power Dissipation

@ Ta=25℃

Junction Temperature

Storage Temperature Range

-5

V

-8

A

-10

A

70

W

2

150

℃

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

4.17 ℃/W

Thermal Resistance,Junction to Ambient 62.5 ℃/W

isc Product Specification

BD544/A/B/C

isc Website：www.iscsemi.cn

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