BD675 데이터 시트보기 (PDF) - Motorola => Freescale

부품명

상세내역

제조사

BD675

4.0 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 60, 80, 100 VOLTS 40 WATTS

Motorola => Freescale 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BD675 BD675A BD677 BD677A BD679 BD679A BD681

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

Symbol

Min

Max

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 50 mAdc, IB = 0)

BD675, 675A

BD677, 677A

BD679, 679A

BD681

BVCEO

45

60

80

100

—

Vdc

—

—

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)

ICEO

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = Rated BVCEO, IE = 0)

(VCB = Rated BVCEO, IE = 0, TC = 100’C)

ICBO

—

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Currert Gain(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.5 Adc,VCE = 3.0 Vdc)

(IC = 2.0 Adc, VCE = 3.0 Vdc)

hFE

BD675, 677, 679, 681

750

BD675A, 677A, 679A

750

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.5 Adc, IB = 30 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 2.0 Adc, IB = 40 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter On Voltage(1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 2.0 Adc, VCE = 3 0 Vdc)

BD677, 679, 681

VCE(sat)

—

BD675A, 677A, 679A

—

BD677, 679, 681

VBE(on)

—

BD675A, 677A, 679A

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.

hfe

1.0

500

µAdc

mAdc

0.2

2.0

2.0

mAdc

—

—

—

2.5

Vdc

2.8

Vdc

2.5

2.5

—

—

5.0

2.0

1.0

BONDING WIRE LIMIT

0.5

THERMALLY LIMIT at TC = 25°C

SECONDARY BREAKDOWN LIMIT

0.2

0.1

0.05

1.0

TC = 25°C

BD675, 675A

BD677, 677A

BD679, 679A

BD681

2.0

5.0

10

20

50

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 2. DC Safe Operating Area

NPN

BD675, 675A

BD677, 677A

BD679, 679A

BD681

BASE

There are two limitations on the power handling ability of a

transistor average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE lim-

its of the transistor that must be observed for reliable opera-

tion; e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by secondary breakdown.

100

COLLECTOR

[ [ 8.0 k

120

EMITTER

Figure 3. Darlington Circuit Schematic

2

Motorola Bipolar Power Transistor Device Data

Share Link: