BD787 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD787 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD787
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
VCE(sat)-4 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.2A
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A; VCE= 3V
VCB= 80V;VBE(off)= 1.5V
VCB= 40V;VBE(off)= 1.5V;TC=125℃
VCE= 30V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
0.4
V
0.6
V
0.8
V
2.5
V
2.0
V
1.8
V
1.0 μA
0.1 mA
0.1 mA
1.0 μA
hFE-1
DC Current Gain
IC= 0.2A; VCE= 3V
40
250
hFE-2
DC Current Gain
IC= 1A; VCE= 3V
25
hFE-3
DC Current Gain
IC= 2A; VCE= 3V
20
hFE-4
DC Current Gain
IC= 4A; VCE= 3V
5
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
50
MHz
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 0.1MHz
50 pF
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