BD800 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD800 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD800
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -80V(Min)
·Low Saturation Voltage
·Complement to Type BD799
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
TC=25℃
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
-3
A
65
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.92 ℃/W
isc Website：www.iscsemi.cn
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