BDT61A 데이터 시트보기 (PDF) - Bourns, Inc
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BDT61A Datasheet PDF : 5 Pages
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BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
20000
10000
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS110AD
TC = -40°C
TC = 25°C
TC = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AB
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1000
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
1·0
IC - Collector Current - A
Figure 1.
1·0
0·5
0
5·0
0·5
TC = -40°C
TC = 25°C
TC = 100°C
1·0
5·0
IC - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AC
3·0
TC = -40°C
TC = 25°C
2·5 TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
5·0
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
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