BDX83A 데이터 시트보기 (PDF) - Inchange Semiconductor

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BDX83A

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

BDX83/A/B/C

DESCRIPTION

·High DC Current Gain-

: hFE= 1000(Min)@ IC= 5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A

80V(Min)- BDX83B; 100V(Min)- BDX83C

APPLICATIONS

·Power switching

·Hammer drivers

·Series and shunt regulators

·Audio amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

BDX83

45

UNIT

BDX83A

60

VCBO

Collector-Base Voltage

V

BDX83B

80

BDX83C 100

BDX83

45

BDX83A

60

VCEO

Collector-Emitter Voltage

V

BDX83B

80

BDX83C 100

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

15

A

IBB

Base Current

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

250

mA

125

W

200

℃

Tstg

Storage Temperature Range

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

isc Website：www.iscsemi.cn

MAX UNIT

1.4 ℃/W

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