BDX83A 데이터 시트보기 (PDF) - Inchange Semiconductor
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BDX83A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX83/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX83
45
BDX83A
60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
IC= 100mA; IB= 0
V
BDX83B
80
BDX83C
100
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 10mA
VBE(on)-1 Base-Emitter On Voltage
IC= 5A; VCE= 3V
VBE(on)-2
ICEV
Base-Emitter On Voltage
BDX83
Collector
Cutoff Current
BDX83A
BDX83B
BDX83C
BDX83
IC= 10A; VCE= 3V
VCE= 45V; VBE= -1.5V
VCE= 45V; VBE= -1.5V; TC= 150℃
VCE= 60V; VBE= -1.5V
VCE= 60V; VBE= -1.5V; TC= 150℃
VCE= 80V; VBE= -1.5V
VCE= 80V; VBE= -1.5V; TC= 150℃
VCE= 100V; VBE= -1.5V
VCE= 100V; VBE= -1.5V; TC= 150℃
VCE= 20V; IB=B 0
2.0
V
2.8
V
4.5
V
0.5
3.0
0.5
3.0
mA
0.5
3.0
0.5
3.0
ICEO
Collector
Cutoff Current
BDX83A VCE= 30V; IB=B 0
BDX83B VCE= 40V; IB=B 0
1.0 mA
BDX83C VCE= 50V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5.0 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 3V
750
hFE-2
DC Current Gain
IC= 5A; VCE= 3V
1000
hFE-3
DC Current Gain
IC= 10A; VCE= 3V
250
isc Website：www.iscsemi.cn
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