BF199 데이터 시트보기 (PDF) - Fairchild Semiconductor
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BF199 Datasheet PDF : 3 Pages
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NPN RF Transistor
BF199
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1
TO-92
1. Collector 2. Emitter 3. Base
Value
25
40
4.0
50
- 55 ~ 150
Units
V
V
V
mA
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
V(BR)CBO
Collector-Base BreakdownVoltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICES
Collector Cut-off Current
On Characteristics
IC = 1.0mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCE = 30V, IE = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
IC = 7.0mA, VCE = 10V
IC = 10mA, IB = 5.0mA
IC = 10mA, IB = 5.0mA
IC = 7.0mA, VCE = 10V
fT
Current gain Bandwidth Product
IC = 7.0mA, VCE = 10V,
f = 100MHz
Cre
Common-Emitter Ruerse
Transfer Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
VCB = 10V, IE = 0, f = 1.0MHz
Min. Max. Units
25
V
40
V
4.0
V
50
nA
38
0.2
V
0.92
V
0.925
V
1100 MHz
0.4
pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
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