Q62702-F1372 데이터 시트보기 (PDF) - Siemens AG

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Q62702-F1372

Silicon N Channel MOS FET Triode

Siemens AG 

BF 543

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Drain-source breakdown voltage

ID = 10 µA, – VGS = 4 V

Gate-source breakdown voltage

± IGS = 10 mA, VDS = 0

Gate cutoff current

± VGS = 6 V, VDS = 0

Drain current

VDS = 10 V, VGS = 0

Gate-source pinch-off voltage

VDS = 10 V, ID = 20 µA

AC Characteristics

Forward transconductance

VDS = 10 V, ID = 4 mA, f = 1 kHz

Gate-1 input capacitance

VDS = 10 V, ID = 4 mA, f = 1 MHz

Reverse transfer capacitance

VDS = 10 V, ID = 4 mA, f = 1 MHz

Output capacitance

VDS = 10 V, ID = 4 mA, f = 1 MHz

Power gain (test circuit)

VDS = 10 V, ID = 4 mA, f = 200 MHz

GG = 2 mS, GL = 0.5 mS

Noise figure (test circuit)

VDS = 10 V, ID = 4 mA, f = 200 MHz

GG = 2 mS, GL = 0.5 mS

Symbol

Values

Unit

min. typ. max.

V(BR)DS

20

–

–

V

V ± (BR)GSS 7

–

12

± IGSS

–

–

50 nA

IDSS

2.0 4

6.0 mA

– VGS(p) –

0.7 1.5 V

gfs

9.5 12 –

mS

Cgss

–

2.7 –

pF

Cdg

–

18 –

fF

Cdss

–

0.9 –

pF

Gp

–

22 –

dB

F

–

1

–

Semiconductor Group

2

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