BF543 데이터 시트보기 (PDF) - Siemens AG

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BF543

Silicon N Channel MOS FET Triode

Siemens AG 

BF 543

Gate input capacitance Cgss = f (VGS)

VDS = 10 V, IDSS = 4 mA, f = 1 MHz

Output capacitance Cdss = f (VDS)

VGS = 0, IDSS = 4 mA, f = 1 MHz

Reverse transfer capacitance

Cdg = f (VDS)

VGS = 0, IDSS = 4 mA, f = 1 MHz

Gate 1 input admittance y11s

VDS = 10 V, IDSS = 4 mA, VGS = 0

(source circuit)

Semiconductor Group

4

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