BF622 데이터 시트보기 (PDF) - Siemens AG

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BF622

NPN Silicon High-Voltage Transistor

Siemens AG 

BF 622

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

IC = 10 µA, RBE = 2.7 kΩ

Collector-base breakdown voltage

IC = 10 µA

Emitter-base breakdown voltage

IE = 10 µA

Collector cutoff current

VCB = 200 V

VCB = 200 V, TA = 150 ˚C

Collector cutoff current

VCE = 200 V, RBE = 2.7 kΩ

VCE = 200 V, RBE = 2.7 kΩ, TA = 150 ˚C

Emitter cutoff current

VEB = 5 V

DC current gain1)

IC = 25 mA, VCE = 20 V

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 1 mA

Base-emitter saturation voltage1)

IC = 10 mA, IB = 1 mA

AC characteristics

Transition frequency

IC = 10 mA, VCE = 10 V, f = 20 MHz

Output capacitance

VCB = 30 V, f = 1 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 250

–

V(BR)CER 250

–

V(BR)CB0 250

–

V(BR)EB0 5

–

ICB0

–

–

–

–

ICER

–

–

–

–

IEB0

–

–

hFE

50

–

VCEsat

–

–

VBEsat

–

–

V

–

–

–

–

100 nA

20

µA

µA

1

50

10

–

–

0.5 V

1

fT

–

Cobo

–

100 –

0.8 –

MHz

pF

1) Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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