BF820 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

부품명

상세내역

제조사

BF820

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

High Voltage Transistors

BF 820, BF 822

Characteristics (Tj = 25/C)

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 1)

VCE = 20 V, IC = 25 mA

hFE

50

–

–

Gain-Bandwidth Product – Transitfrequenz

VCE = 20 V, IC = 25 mA, f = 100 MHz

fT

50 MHz

–

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 30 V, IE = ie = 0, f = 1 MHz

CCB0

–

Thermal resistance – Wärmewiderstand

junction to ambient air – Sperrschicht zu umgebender Luft

junction to soldering point – Sperrschicht zu Lötpad

–

RthA

RthS

1.6 pF

87 K/W 2)

27 K/W

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BF 721, BF 723

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

11

Share Link: