BF822 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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BF822

NPN General Purpose Amplifier

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

NPN General Purpose Amplifier

BF820/BF822

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO

IC=100μA IE=0 BF820 300

BF822 250

V

Collector-emitter breakdown

voltage

V(BR)CEO

IC=1mA IB=B 0

BF820 300

BF822 250

V

Emitter-base breakdown voltage V(BR)EBO IE=100μA IC=0

5

V

Collector cut-off current

ICBO

VCB=200V IE=0

10 nA

Emitter cut-off current

IEBO

VEB=5V IC=0

50 nA

DC current gain

hFE

VCE=20V IC=25mA

50

Collector-emitter saturation voltage VCE(sat)

IC=30mA IB=B 5mA

0.6 V

Transition frequency

fT

VCE=10V

f=100MHz

IC=10mA 60

MHz

Feedback capacitance

Cre

PACKAGE OUTLINE

Plastic surface mounted package

VCB=30V IC=0 f=100MHz

1.6 pF

SOT-23

A

K

D

G

E

B

J

H

C

SOT-23

Dim

Min

Max

A

2.85

2.95

B

1.25

1.35

C

1.0Typical

D

0.37

0.43

E

0.35

0.48

G

1.85

1.95

H

0.02

0.1

J

0.1Typical

K

2.35

2.45

All Dimensions in mm

Document number: BL/SSSTC107

Rev.A

www.galaxycn.com

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