BF822 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF822 Datasheet PDF : 7 Pages
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NXP Semiconductors
NPN high-voltage transistors
Product data sheet
BF820; BF822
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BF820
BF822
collector-emitter voltage
BF820
BF822
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
300
V
−
250
V
−
300
V
−
250
V
−
5
V
−
50
mA
−
100
mA
−
50
mA
−
250
mW
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
Cre
fT
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
feedback capacitance
transition frequency
CONDITIONS
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj =150 °C
IC = 0; VEB = 5 V
IC = 25 mA; VCE = 20 V
IC = 30 mA; IB = 5 mA
MIN.
−
−
−
50
−
MAX.
10
10
50
−
600
UNIT
nA
µA
nA
mV
IC = Ic = 0; VCB = 30 V; f = 1 MHz
−
IC = 10 mA; VCE = 10 V; f = 100 MHz 60
1.6
pF
−
MHz
2004 Jan 16
3
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