BFR90 데이터 시트보기 (PDF) - Vishay Semiconductors

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BFR90

Silicon NPN Planar RF Transistor

Vishay Semiconductors 

BFR90

Vishay Telefunken

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Collector cut-off current

VCE = 20 V, VBE = 0

Collector-base cut-off current

VCB = 20 V, IE = 0

Emitter-base cut-off current

VEB = 2 V, IC = 0

Collector-emitter breakdown voltage IC = 1 mA, IB = 0

DC forward current transfer ratio VCE = 10 V, IC = 14 mA

Symbol Min Typ Max Unit

ICES

100 mA

ICBO

IEBO

100 nA

10 mA

V(BR)CEO 15

V

hFE 25 50 150

Electrical AC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Transition frequency

Collector-base capacitance

Collector-emitter

capacitance

Emitter-base capacitance

Noise figure

Power gain

Linear output voltage – two

tone intermodulation test

Third order intercept point

Test Conditions

VCE = 10 V, IC = 14 mA, f = 500 MHz

VCB = 10 V, f = 1 MHz

VCE = 10 V, f = 1 MHz

VEB = 0.5 V, f = 1 MHz

W VCE = 10 V, IC = 2 mA, f = 500 MHz,

ZS = 50

VCE = 10 V, IC = 14 mA, ZL = ZLopt,

f = 500 MHz

VCE = 10 V, IC = 14 mA, ZL = ZLopt,

f = 800 MHz

VCE = 10 V, IC = 14 mA, dIM = 60 dB,

W f1 = 806 MHz, f2 = 810 MHz,

ZS = ZL = 50

VCE = 10 V, IC = 14 mA, f = 800 MHz

Symbol Min Typ Max Unit

fT

5

GHz

Ccb

0.35

pF

Cce

0.3

pF

Ceb

1.3

pF

F

2.2

dB

Gpe

19.5

dB

Gpe

14

dB

V1 = V2

100

mV

IP3

23

dBm

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2 (9)

Document Number 85028

Rev. 3, 20-Jan-99

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