NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD802
Table 4 Bandwidth 40 to 550 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Gp
SL
FL
s11
s22
s21
CTB
Xmod
CSO
d2
Vo
NF
Itot
power gain
f = 50 MHz
f = 550 MHz
slope cable equivalent
f = 40 to 550 MHz
flatness of frequency response f = 40 to 550 MHz
input return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
input return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
phase response
f = 50 MHz
composite triple beat
77 channels flat;
Vo = 44 dBmV;
measured at 547.25 MHz
cross modulation
77 channels flat;
Vo = 44 dBmV;
measured at 55.25 MHz
composite second order distortion 77 channels flat;
Vo = 44 dBmV;
measured at 548.5 MHz
second order distortion
note 1
output voltage
noise figure
dim = −60 dB; note 2
see Table 1
total current consumption (DC) note 3
18
18.5 19
dB
18.5 19.3 −
dB
0.2
−
2
dB
−
−
±0.3 dB
20
35
−
dB
18.5 31
−
dB
17
27
−
dB
16
22
−
dB
20
29.5 −
dB
18.5 29
−
dB
17
25.5 −
dB
16
23
−
dB
−45 −
+45 deg
−
−67 −65 dB
−
−66 −63 dB
−
−67 −63 dB
−
−
−72 dB
65
−
−
dBmV
−
−
−
dB
−
395 410 mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 493.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 548.5 MHz.
2. Measured according to DIN45004B:
fp = 540.25 MHz; Vp = Vo;
fq = 547.25 MHz; Vq = Vo −6 dB;
fr = 549.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 538.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2002 Jan 23
6