BSP60 데이터 시트보기 (PDF) - NXP Semiconductors.

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BSP60

PNP Darlington transistors

NXP Semiconductors. 

NXP Semiconductors

PNP Darlington transistors

Product data sheet

BSP60; BSP61; BSP62

FEATURES

• High current (max. 0.5 A)

• Low voltage (max. 80 V)

• Integrated diode and resistor.

APPLICATIONS

• Industrial switching applications such as:

– Print hammer

– Solenoid

– Relay and lamp drivers.

PINNING

PIN

1

2, 4

3

base

collector

emitter

DESCRIPTION

4

2, 4

1

DESCRIPTION

PNP Darlington transistor in a SOT223 plastic package.

NPN complements: BSP50, BSP51 and BSP52.

1

2

3

Top view

MAM266

3

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

VCBO

VCES

VEBO

IC

ICM

IB

Ptot

Tstg

Tj

Tamb

PARAMETER

collector-base voltage

BSP60

BSP61

BSP62

collector-emitter voltage

BSP60

BSP61

BSP62

emitter-base voltage

collector current (DC)

peak collector current

base current (DC)

total power dissipation

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

VBE = 0

open collector

Tamb ≤ 25 °C; note 1

MIN.

MAX.

UNIT

−

−60

V

−

−80

V

−

−90

V

−

−45

V

−

−60

V

−

−80

V

−

−5

V

−

−1

A

−

−2

A

−

−100

mA

−

1.25

W

−65

+150

°C

−

150

°C

−65

+150

°C

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

2001 May 31

2

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