BSP75N 데이터 시트보기 (PDF) - Infineon Technologies

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BSP75N

Smart Lowside Power Switch

Infineon Technologies 

HITFET BSP 75N

Electrical Characteristics

Tj = 25 °C, unless otherwise specified

Parameter

Sym-

bol

Limit Values Unit Test Conditions

min. typ. max.

Static Characteristics

Drain source clamp voltage

Off state drain current

VDS(AZ) 60 –

IDSS –

–

75 V

5 µA

Input threshold voltage

VIN(th) 1

1.8 2.5 V

Input current:

µA

normal operation, ID < ID(lim):

IIN(1)

current limitation mode, ID = ID(lim): IIN(2)

After thermal shutdown, ID = 0 A: IIN(3)

– 100 200

– 250 400

1000 1500 2000

On-state resistance

RDS(on)

Tj = 25 °C

–

Tj = 150 °C

–

mΩ

490 675

850 1350

On-state resistance

RDS(on)

Tj = 25 °C

–

Tj = 150 °C

–

mΩ

430 550

750 1000

Nominal load current

ID(Nom) 0.7 –

–

A

Current limit

ID(lim) 1

1.5 1.9 A

ID = 10 mA,

Tj = -40 … +150 °C

VIN = 0 V,

VDS = 32 V,

Tj = -40 … +150 °C

ID = 10 mA

VIN = 5 V

ID = 0.7 A,

VIN = 5 V

ID = 0.7 A,

VIN = 10 V

VBB = 12 V,

VDS = 0.5 V,

TS = 85 °C,

Tj < 150 °C

VIN = 10 V,

VDS = 12 V

Dynamic Characteristics 1)

Turn-on time

Turn-off time

VIN to 90% ID: ton

–

10 20 µs RL = 22 Ω,

VIN = 0 to 10 V,

VBB = 12 V

VIN to 10% ID: toff

–

10 20 µs RL = 22 Ω,

VIN = 10 to 0 V,

VBB = 12 V

Data Sheet Rev. 1.4

5

2008-07-10

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