Q67060-S6953A3 데이터 시트보기 (PDF) - Infineon Technologies

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Q67060-S6953A3

Smart Highside High Current Power Switch

Infineon Technologies 

PROFET® Data Sheet BTS555

Smart Highside High Current Power Switch Reversave

Reversave

• Reverse battery protection by self turn on of

power MOSFET

Features

• Overload protection

• Current limitation

• Short circuit protection

• Overtemperature protection

• Overvoltage protection (including load dump)

• Clamp of negative voltage at output

Product Summary

Overvoltage protection

Output clamp

Operating voltage

On-state resistance

Load current (ISO)

Short circuit current limitation

Current sense ratio

Vbb(AZ)

VON(CL)

Vbb(on)

RON1)

IL(ISO)

IL(SCp)

IL : IIS

62 V

44 V

5.0 ... 34 V

2.5 mΩ

165 A

520 A

30 000

• Fast deenergizing of inductive loads 2)

• Low ohmic inverse current operation

• Diagnostic feedback with load current sense

• Open load detection via current sense

TO-218AB/5

TO-218AB-5-1

• Loss of Vbb protection3)

5

• Electrostatic discharge (ESD) protection

Application

• Power switch with current sense diagnostic

1

Straight leads

Staggered leads

feedback for 12 V and 24 V DC grounded loads

• Most suitable for loads with high inrush current

like lamps and motors; all types of resistive and inductive loads

• Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.

Voltage

source

Voltage

sensor

2 IN

ESD

I IN

Logic

VIN

V IS

Logic GND

I IS

IS

4

RIS

R bb

Overvoltage Current

Gate

protection

limit

protection

Charge pump

Level shifter

Rectifier

Limit for

unclamped

ind. loads

Output

Voltage

detection

Current

Sense

3 & Tab

+ Vbb

OUT 1, 5

IL

Load

Temperature

sensor

PROFET

Load GND

1 ) Due to the different lead frame geometry Ron @25°C is 0.3 mΩ higher in staggered than in straight version,

and accordingly for other temperatures.

2 ) With additional external diode.

3) Additional external diode required for energized inductive loads (see page 9).

Infineon Technologies AG

1 of 16

2003-Oct-01

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