Q67060-S6953A3 데이터 시트보기 (PDF) - Infineon Technologies

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Q67060-S6953A3

Smart Highside High Current Power Switch

Infineon Technologies 

Data Sheet BTS555

Reverse battery protection

-Vbb

Rbb

IN

RIN

Logic

OUT

Power

Transistor

Version b:

Vbb

Vbb

IN PROFET OUT

IS

IS

DS

VZb

RL

D

RIS

RV

Signal GND

Power GND

RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse

battery protection in applications with Vbb above

16

V19);

recommended

value:

1

RIN

+

1

RIS

+

1

RV

=

0.1A

1

0.1A

|Vbb| - 12V if DS is not used (or RIN = |Vbb| - 12V if DS is

used).

To minimize power dissipation at reverse battery

operation, the summarized current into the IN and IS

pin should be about 120mA. The current can be

provided by using a small signal diode D in parallel to

the input switch, by using a MOSFET input switch or by

proper adjusting the current through RIS and RV.

Note that there is no reverse battery protection when

using a diode without additional Z-diode VZL, VZb.

Version c: Sometimes a neccessary voltage clamp is

given by non inductive loads RL connected to the same

switch and eliminates the need of clamping circuit:

Vbb

Vbb

RL

IN PROFET OUT

IS

Vbb disconnect with energized inductive

load

Provide a current path with load current capability by

using a diode, a Z-diode, or a varistor. (VZL < 72 V or

VZb < 30 V if RIN=0). For higher clamp voltages

currents at IN and IS have to be limited to 250 mA.

Version a:

Vbb

V bb

IN

PROFET OUT

IS

VZL

Infineon Technologies AG

9

2003-Oct-01

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