BTS650PE3180A 데이터 시트보기 (PDF) - Siemens AG
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BTS650PE3180A Datasheet PDF : 16 Pages
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Inverse load current operation
V bb
+
-
VIN
Vbb
- IL
IN PROFET OUT
IS
IIS
VIS
R IS
VOUT +
-
BTS650P
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
L [µH]
1000000
100000
10000
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense
feature is not available during this kind of operation (IIS
= 0). With IIN = 0 (e.g. input open) only the intrinsic
drain source diode is conducting resulting in consi-
derably increased power dissipation. If the device is
switched on (VIN = 0), this power dissipation is
decreased to the much lower value RON(INV) * I2
(specifications see page 4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
E bb
1000
100
10
1
1A
10 A
100 A
1000 A
IL [A]
E AS
Externally adjustable current limit
V bb
I IN
V bb
i L(t)
IN PROFET OUT
IS
RIS
L
{Z L RL
ELoad
EL
ER
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by IS*RIS . After a delay time defined by
RV*CV T1 will be reset. The device is turned on again,
the short circuit current is defined by IL(SC) and the
device is shut down after td(SC) with latch function.
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= 2IL·R· LL(Vbb + |VOUT(CL)|)
ln
(1+
IL·RL
|VOUT(CL)|
)
Vbb
IN
Vbb
PROFET OUT
RV
IN
Signal
T1
Signal
GND
CV
T2
IS
Rload
R IS
Power
GND
Semiconductor Group
Page 10
1998-Nov.-2
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