BUP602D 데이터 시트보기 (PDF) - Siemens AG
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BUP602D Datasheet PDF : 9 Pages
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BUP 602D
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 20 A
20
V
VGE 16
14
100 V
300 V
12
10
8
6
4
2
0
0 10 20 30 40 50 60 70 nC 90
QGate
Short circuit safe operating area
ICsc = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH
10
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
nF
C
10 0
Ciss
10 -1
Coss
Crss
10 -2
0
5 10 15 20 25 30 V 40
VCE
Reverse biased safe operating area
ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = 15 V
2.5
ICsc/IC(90°C)
6
ICpuls/IC
1.5
4
1.0
2
0
0 100 200 300 400 500 600 V 800
VCE
Semiconductor Group
7
0.5
0.0
0
100 200 300 400 500 600
V 800
VCE
Jul-31-1996
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