BUV50 데이터 시트보기 (PDF) - Inchange Semiconductor
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BUV50 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV50
DESCRIPTION
·High Current Capability
·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V (Max.) @IC= 10A
·High Switching Speed
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
VCEO
Collector-Emitter Voltage
(VBE= -1.5V)
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IBB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
250
V
125
V
7
V
25
A
50
A
6
A
12
A
150
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W
isc Website：www.iscsemi.cn
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