BUX80(2012) 데이터 시트보기 (PDF) - Comset Semiconductors
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BUX80 Datasheet PDF : 3 Pages
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NPN BUX80
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VCEO(SUS)
VCER
IEBO
Collector-Emitter Sustaining
Voltage (*)
Collector-Emitter Sustaining
Voltage (*)
Emitter Cutoff Current
ICES
Collector Cutoff Current
hFE
VCE(SAT)
VBE(SAT)
ton
DC Current Gain (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation
Voltage (*)
Turn-on time
ts
Storage time
tf
File time
IC=100 mA
IC=100 mA
RBE = 50Ω
VCE=10 V, IC=0
VCE= VCES, VBE= 0
VCE= VCES, VBE= 0
Tcase = 125°C
IC=1.2 A, VCE=5.0 V
IC=5 A, IB=1 A
IC=8 A, IB=2.5 A
IC=5 A, IB=1 A
IC=8 A, IB=2.5 A
IC=5 A, IB=1 A
VCC=250 V
IC=5 A, VCC=250 V
IB1 =1A, -IB2 =2 A
IC=5 A, VCC=-250 V
IB1 =1A, -IB2 =2 A
400 -
500 -
-
-
-
-
-
-
- 30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
-
V
10 mA
1
3 mA
-
-
1.5
3
1.4
V
1.8
0.5
3.5 µs
0.5
(*) Pulse Duration = 300 µs, Duty Cycle <= 1.5%
26/10/2012
COMSET SEMICONDUCTORS
2/3
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