SU169 데이터 시트보기 (PDF) - STMicroelectronics

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SU169

HIGH VOLTAGE NPN SILICON TRANSISTOR

STMicroelectronics 

BUY69A

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-case

Max

1.75

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol

P a ram et er

Test Conditions

ICES

IEBO

VCEO(sus)

Collector Cut-off

Current (VBE = 0)

Emitter Cut-off Current

(IC = 0)

Co lle ct or- Em it t er

Sustaining Voltage

VCE = 1000 V

VEB = 8 V

IC = 100 mA

VCE(sat)∗ Collect or-Emitter

Saturation Voltage

IC = 8 A

IB = 2.5 A

VBE(s at)∗ Base-Emitt er

Saturation Voltage

IC = 8 A

IB = 2.5 A

hFE∗ DC Current G ain

IC = 2.5 A

VCE = 10 V

fT

Transit ion F requency IC = 0. 5 A

VCE = 10 V

Is/b**

Second Breakdown

Collector Current

VCE = 25 V

Turn on Time

ton

IC = 5 A

IB1 = 1 A

VCE = 250 V

ts

Storage Time

ts

Fall Time

IC = 5 A

IB1 = - IB2 = 1 A

VCE = 250 V

tf

Fall Time

IC = 8 A

IB1 = - IB2 = 2.5 A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

∗∗ Pulsed: 1s, non repetitive pulse.

For characteristics curves see the BUW34/5/6 series.

VCE = 40 V

Min. Typ.

1000

15

10

4

0.2

M a x.

1

1

3.3

2.2

1.7

0.3

1

Unit

mA

mA

V

V

V

MHz

A

µs

µs

µs

µs

2/4

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