BZX84C10ET1 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
BZX84C10ET1 Datasheet PDF : 6 Pages
| |||
BZX84C2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device*
VZ1 (V)
@ IZT1 = 5 mA
(Note 4)
Device
Marking Min Nom Max
ZZT1
(W)
@ IZT1
=
5 mA
VZ2 (V)
@ IZT2 = 1
mA
(Note 4)
Min Max
ZZT2
(W)
@ IZT2
=
1 mA
VZ3 (V)
@ IZT3=20 mA
(Note 4)
Min Max
ZZT3
(W)
@
IZT3=
20 mA
Max
Reverse
Leakage
Current
IR
mA
@
VR
(V)
qVZ
(mV/k)
@ IZT1=5 mA
Min Max
C (pF)
@
VR = 0
f=
1 MHz
BZX84C2V4ET1, G
BA1 2.2 2.4 2.6 100 1.7 2.1 600
2.6 3.2
50
50 1.0 −3.5 0
450
BZX84C2V7ET1, G
BA2 2.5 2.7 2.9 100 1.9 2.4 600
3.0 3.6
50
20 1.0 −3.5 0
450
BZX84C3V0ET1, G
BA3 2.8 3.0 3.2
95
2.1 2.7 600
3.3 3.9
50
10 1.0 −3.5 0
450
BZX84C3V3ET1, G
BA4 3.1 3.3 3.5
95
2.3 2.9 600
3.6 4.2
40
5.0 1.0 −3.5 0
450
BZX84C3V6ET1, G
BA5 3.4 3.6 3.8
90
2.7 3.3 600
3.9 4.5
40
5.0 1.0 −3.5 0
450
BZX84C3V9ET1, G
BA6 3.7 3.9 4.1
90
2.9 3.5 600
4.1 4.7
30
3.0 1.0 −3.5 −2.5 450
BZX84C4V3ET1, G
BA7 4.0 4.3 4.6
90
3.3 4.0 600
4.4 5.1
30
3.0 1.0 −3.5 0
450
BZX84C4V7ET1, G
BA9 4.4 4.7 5.0
80
3.7 4.7 500
4.5 5.4
15
3.0 2.0 −3.5 0.2 260
BZX84C5V1ET1, G
BB1 4.8 5.1 5.4
60
4.2 5.3 480
5.0 5.9
15
2.0 2.0 −2.7 1.2 225
BZX84C5V6ET1, G
BB2 5.2 5.6 6.0
40
4.8 6.0 400
5.2 6.3
10
1.0 2.0 −2 2.5 200
BZX84C6V2ET1, G
BB3 5.8 6.2 6.6
10
5.6 6.6 150
5.8 6.8
6
3.0 4.0 0.4 3.7 185
BZX84C6V8ET1, G
BB4 6.4 6.8 7.2
15
6.3 7.2
80
6.4 7.4
6
2.0 4.0 1.2 4.5 155
BZX84C7V5ET1, G
BB5 7.0 7.5 7.9
15
6.9 7.9
80
7.0 8.0
6
1.0 5.0 2.5 5.3 140
BZX84C8V2ET1, G
BB6 7.7 8.2 8.7
15
7.6 8.7
80
7.7 8.8
6
0.7 5.0 3.2 6.2 135
BZX84C9V1ET1, G
BB7 8.5 9.1 9.6
15
8.4 9.6 100
8.5 9.7
8
0.5 6.0 3.8 7.0 130
BZX84C10ET1, G
BB8 9.4 10 10.6 20
9.3 10.6 150
9.4 10.7
10
0.2 7.0 4.5 8.0 130
BZX84C11ET1, G
BB9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8
10
0.1 8.0 5.4 9.0 130
BZX84C12ET1, G
BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9
10
0.1 8.0 6.0 10 130
BZX84C13ET1, G
BC2 12.4 13 14.1 30 12.3 14 170 12.5 14.2
15
0.1 8.0 7.0 11 120
BZX84C15ET1, G
BC3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7
20
0.05 10.5 9.2 13 110
BZX84C16ET1, G
BC4 15.3 16 17.1 40 15.2 17
200 15.4 17.2
20
0.05 11.2 10.4 14 105
BZX84C18ET1, G
BC5 16.8 18 19.1 45 16.7 19
225 16.9 19.2
20
0.05 12.6 12.4 16 100
BZX84C20ET1, G
BC6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4
20
0.05 14 14.4 18
85
BZX84C22ET1, G
BC7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4
25
0.05 15.4 16.4 20
85
BZX84C24ET1, G
BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7
25
0.05 16.8 18.4 22
80
Device
VZ1 Below
@ IZT1 = 2 mA
Device
Marking Min Nom Max
ZZT1
Below
@ IZT1
=
2 mA
VZ2 Below
@ IZT2 =
0.1 mA
Min Max
ZZT2
Below
@ IZT4
=
0.5 mA
VZ3 Below
@ IZT3 = 10 mA
Min Max
ZZT3
Below
@ IZT3
=
10 mA
Max
Reverse
Leakage
Current
IR
mA
@
VR
(V)
qVZ
(mV/k)
Below
@ IZT1 = 2
mA
Min Max
C (pF)
@ VR
=0
f=
1 MHz
BZX84C27ET1, G
BC9 25.1 27 28.9 80
25 28.9 300 25.2 29.3
45
0.05 18.9 21.4 25.3 70
BZX84C30ET1
BD1 28 30 32
80 27.8 32 300 28.1 32.4
50 0.05 21 24.4 29.4 70
BZX84C33ET1, G
BD2 31 33 35
80 30.8 35 325 31.1 35.4
55 0.05 23.1 27.4 33.4 70
BZX84C36ET1, G
BD3 34 36 38
90 33.8 38 350 34.1 38.4
60 0.05 25.2 30.4 37.4 70
BZX84C39ET1, G
BD4 37 39 41
130 36.7 41
350 37.1 41.5
70
0.05 27.3 33.4 41.2 45
BZX84C43ET1, G
BK6 40 43 46
150 39.7 46
375 40.1 46.5
80
0.05 30.1 37.6 46.6 40
BZX84C47ET1, G
BD5 44 47 50
170 43.7 50
375 44.1 50.5
90
0.05 32.9 42 51.8 40
BZX84C51ET1, G
BD6 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40
BZX84C56ET1, G
BD7 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40
BZX84C62ET1, G
BD8 58 62 66 215 57.4 66 450 58.2 67
120 0.05 43.4 58.8 71.6 35
BZX84C68ET1, G
BD9 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35
BZX84C75ET1, G
BE1 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C
* The “G” suffix indicates Pb−Free package available.
http://onsemi.com
3
Share Link: 