CNY17F-1X007(2004) 데이터 시트보기 (PDF) - Vishay Semiconductors
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CNY17F-1X007 Datasheet PDF : 9 Pages
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CNY17F
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
6.0
V
DC forward current
IF
60
mA
Surge forward current
t ≤ 10 µs
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
BVCEO
70
V
Collector current
IC
50
mA
t ≤ 1.0 ms
IC
100
mA
Total power dissipation
Pdiss
150
mW
Coupler
Parameter
Isolation test voltage (between
emitter and detector referred to
standard climate 23/50 DIN
50014)
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Test condition
VIO = 500 V
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Symbol
VISO
RIO
Tstg
Tamb
Tj
Tsld
Value
5300
≥ 7.0
≥ 7.0
≥ 0.4
175
≥ 1011
- 55 to + 150
- 55 to + 100
100
260
Unit
VRMS
mm
mm
mm
Ω
°C
°C
°C
°C
www.vishay.com
2
Document Number 83607
Rev. 1.5, 26-Oct-04
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