FDS6614A 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
FDS6614A Datasheet PDF : 8 Pages
| |||
Typical Characteristics (continued)
10
ID = 9.3A
8
6
4
2
0
0
5
VDS = 5V
10V
15V
10
15
20
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics
1600
1400
1200
1000
800
600
400
200
0
25
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
50
SINGLE PULSE
40
RθJA = 125oC/W
TA = 25oC
30
20
10
0
100
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.5
0.2
0.1
0.05
0.02
0.01
0 .0 0 5
D = 0.5
0.2
0.1
0 .0 5
0 .0 2
0.0 1
S i n g le P ul se
0 .0 0 2
0 .0 0 1
0 .00 0 1
00. 01
0. 0 1
0.1
1
t 1, TIM E (s e c )
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
P(pk )
t1
t2
TJ - TA = P * RθJA ( t)
D u t y C y c l e, D = t 1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6614A Rev. C
Share Link: 