DB3 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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DB3

Silicon Bidirectional Diacs

Shenzhen Luguang Electronic Technology Co., Ltd 

DB3/DB4

Silicon Bidirectional Diacs

Features

The three layer,two termnal,axial lead,hermetically

1111sealed diacs are des igned s pecifically for triggering

1111thyristors .They demonstrate low breakover current at

1111breakover voltage as they withs tand peak pulse

1111current,The breakover s ymmetry is within three

1111volts(DB3,DB4). These diacs are intended for use in

CCCthyrisitors phase control,circuits for lamp dimming,

FFFI universal motor speed control,and heat control.

VOLTAGE RANGE: 28-45 V

A-405

ABSOLUTE RATINGS

Parameters

Symbols

Dimensions in inches and (millimeters)

DB3,DB4

UNITS

Power dissipation on printed

TA=50oC circuit (L=10mm)

Pc

Repetitive peak on-state

current

tp=20 S

f=120Hz

ITRM

Operating junction temperature

TJ

Storage temperature

TSTG

ELECTRICAL CHARACTERISTICS

150.0

2.0

-40--- +125

-40--- +125

Parameters

Test Conditions

Breakover voltage (NOTE 1)

Min

VBO

C=22nf(NOTE 2)

See FIG.1

Typ

Max

Breakover voltage symmetry

Dynamic breakover voltage (NOTE 1)

I+VBO I-

I-VBOI

I± VI

C=22nf(NOTE 2)

Max

See FIG.1

I=(IBO to IF=10mA)

See FIG.1

Min

Output voltage (NOTE 1)

Vo

See FIG.2

Min

Breakover current (NOTE 1)

Rise time (NOTE 1)

Leakage current (NOTE 1)

IBO

C=22nf(NOTE 2)

Max

tr

See FIG.3

Typ

IR

VR=0.5 VBO

See FIG.1

Max

NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.

2.Connected in parallel w ith the devices

DB3

DB4

28

35

32

40

36

45

±3.0

5.0

5.0

100.0

1.5

10.0

mW

A

oC

oC

UNITS

V

V

V

V

A

S

A

Revision:20170701-P1

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mail:lge@lgesemi.com

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