DB3 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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DB3

Silicon Bidirectional Diacs

Shenzhen Luguang Electronic Technology Co., Ltd 

DB3/DB4

Silicon Bidirectional Diacs

Ratings and Characteristic Curves

FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE

FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE

+IF

10mA

IBO

IB

-V

0.5VBO

+V

Ｖ

220V

60Hz

10KΩ

500KΩ

0.1µ F

D.U.T

Vo

R=20Ω

VBO

-IF

FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A

90%

IP

10%

tr

FIG.4--POWER DISSIPATION VERSUS AMBIENT

TEMPERATURE (MAXIMUM VALUES)

P(mW)

160

140

120

100

80

60

40

20

Tamb( ℃　)

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130

FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION

TEMPERATURE(TYPICAL VALUES)

VBO(TJ)

1.08 VBO(TJ=25 )

1.06

1.04

TJ( )

1.02

1.00

25

50

75

100

125

FIG.6--PEAK PULSEE CURRENT VERENT VERSUS

PULSE DURATION(MAXIMUM VALUES)

ITRM(A)

2

1

f=100Hz

TJ initial=25℃

0.1

tp(µ s)

0.01

10

100

1000

10000

Revision:20170701-P1

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