DB3 데이터 시트보기 (PDF) - Semtech Electronics LTD.

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DB3

SILICON BIDIRECTIONAL DIACS

Semtech Electronics LTD. 

DB3, DB4, DC34

SILICON BIDIRECTIONAL DIACS

The glass passivated, three-layer, two terminal, axial lead,

hermetically sealed diacs are designed specifically for

triggering thyristors. They demonstrate low breakover

current at breakover voltage as they withstand peak pulse

current. These diacs are intended for use in thyristor phase

control, circuits for lamp-dimming, universal-motor speed

controls, and heat controls.

Max. 0.5

Max. 1.9

Min. 27.5

Black

Part No.

Black

"ST" Brand

XXX

Max. 3.9

ST

Min. 27.5

Glass Case DO-35

Dimensions in mm

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Power Dissipation (Ta = 65 OC)

Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz)

Operating Junction and Storage Temperature Range

Symbol

Value

Unit

Ptot

150

mW

ITRM

2

A

Tj,Tstg

- 40 to + 125

OC

Characteristics at Ta = 25 OC

Parameter

Breakover Voltage

Breakover Currents

Breakover Voltage Symmetry

Dynamic Breakover Voltage

ΔI = [IBR to IF = 10 mA]

DB3

DC34

DB4

Symbol

V(BR)1 and V(BR)2

I(BR)1 and I(BR)2

[V(BR)1]-[V(BR)2]

| ΔV ± |

Min.

28

30

35

-

-

5

Max.

Unit

36

38

V

45

200

µA

3.8

V

-

V

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

Dated : 08/11/2008

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