EGP20A 데이터 시트보기 (PDF) - General Semiconductor

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EGP20A

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

General Semiconductor 

EGP20A THRU EGP20G

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Reverse Voltage - 50 to 400 Volts Forward Current - 2.0 Amperes

*

TED

PATEN

DO-204AC

1.0

(25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

0.300 (7.6)

0.230 (5.8)

® 1.0

(25.4)

MIN.

0.140 (3.6)

0.104 (2.6)

DIA.

Dimensions in inches and (millimeters)

*Glass-plastic encapsulation technique is covered by

Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Glass passivated cavity-free junction

♦ Superfast recovery time for high efficiency

♦ Low forward voltage, high current capability

♦ Low leakage current

♦ High surge current capability

♦ High temperature

metallurgically bonded construction

♦ High temperature soldering guaranteed:

300°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-204AC molded plastic over solid glass

body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.015 ounce, 0.4 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at TA=55°C

Peak forward surge current,

8.3 ms single half sine-wave superimposed

on rated load

SYMBOLS

EGP

20A

EGP

20B

VRRM

50

100

VRMS

35

70

VDC

50

100

I(AV)

EGP

20C

EGP

20D

150 200

105 140

150 200

2.0

IFSM

75.0

Maximum instantaneous forward voltage at 2.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25°C

TA=125°C

Maximum reverse recovery time (NOTE 1)

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

VF

IR

trr

CJ

RΘJA

RΘJL

TJ, TSTG

0.95

5.0

100.0

50.0

70.0

40.0

15.0

-65 to +150

NOTES:

(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A

(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted

EGP

20F

EGP

20G UNITS

300 400 Volts

210 280 Volts

300 400 Volts

Amps

Amps

1.25

45.0

Volts

µA

ns

pF

°C/W

°C

4/98

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