EGP30A 데이터 시트보기 (PDF) - Vishay Semiconductors
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EGP30A Datasheet PDF : 4 Pages
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EGP30A thru EGP30G
Vishay General Semiconductor
100
TJ = 150 °C
10
TJ = 25 °C
1
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.01
0.2
EGP30A thru EGP30D
EGP30F and EGP30G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
210
TJ = 25 °C
180
f = 1.0 MHz
Vsig = 50 mVp-p
150
120
90
60
30
0
0
EGP30A thru EGP30D
EGP30F and EGP30G
1
10
100
Reverse Voltage (V)
1000
Fig. 5 - Typical Junction Capacitance
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GP20
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.042 (1.07)
0.037 (0.94)
DIA.
1.0 (25.4)
MIN.
Document Number: 88584 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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