EMP11(2007) 데이터 시트보기 (PDF) - ROHM Semiconductor

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EMP11
(Rev.:2007)

Switching diode

ROHM Semiconductor 

Diodes

Switching diode

EMP11

EMP11

zApplication

Ultra high speed switching

zDimensions (Unit : mm)

zFeatures

1) Ultra small mold type. (EMD6)

2) High reliability

1.6±0.1

0.22±0.05

(6)

(5) (4)

0.13±0.05

zLand size figure (Unit : mm)

1.0

0.5 0.5

0.3

0.25 0.15 0.15 0.25

zConstruction

Silicon epitaxial planar

(1)

(2)

(3)

0.5

0.5

1.0±0.1

0～0.1

0.5±0.05

0.4

EMD6

zStructure

ROHM : EMD6

JEITA : SC-75A Size

dot (year week factory)

zTaping specifications (Unit : mm)

4.0±0.1 2.0±0.05

φ1.5

+0.1

−0

0.3±0.1

1PIN

1.7±0.05

4.0±0.1

φ0.8±0.1

0.65±0.1

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Reverse voltage (repetitive peak)

VRM

80

V

Reverse voltage (DC)

VR

80

V

Forward current (Single)

IFM

300

mA

Average rectified forward current (Single) Io

100

mA

Surge current （t=1us）

Power dissipation

Isurge

4

Pd

150

A

mW

Junction temperature

Tj

150

℃

Storage temperature

Tstg

-55 to +150

℃

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Forward voltage

Reverse current

Capacitance between terminals

VF

-

-

1.2

IR

-

-

0.1

Ct

-

-

3.5

Reverse recovery time

trr

-

-

4

Unit

Conditions

V

IF=100mA

µA

VR=70V

pF

VR=6V , f=1MHz

ns

VR=6V , IF=5mA , RL=50Ω

Rev.D

1/2

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