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ER1A(2007) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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ER1A
(Rev.:2007)
Diotec
Diotec Semiconductor Germany  Diotec
ER1A Datasheet PDF : 2 Pages
1 2
ER1A ... ER1M
ER1A ... ER1M
Superfast Switching Surface Mount Si-Diodes
Superschnelle Si-Dioden für die Oberflächenmontage
Version 2007-07-02
Nominal current – Nennstrom
5± 0.2
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
1
0.15
Type
Typ
4.6± 0.2
Dimensions - Maße [mm]
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1A
50...1000 V
~ SMA
~ DO-214AC
0.07 g
Maximum ratings
Type
Typ
ER1A
ER1B
ER1D
ER1G
ER1J
ER1K
ER1M
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
200
400
600
800
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TT = 100°C IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i2t
Tj
TS
1A
6 A 1)
30 A
4.5 A2s
-50...+150°C
-50...+150°C
1 Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
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