F25L004A-50DG 데이터 시트보기 (PDF) - [Elite Semiconductor Memory Technology Inc.

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F25L004A-50DG

3V Only 4 Mbit Serial Flash Memory

[Elite Semiconductor Memory Technology Inc. 

ESMT

F25L004A

Byte-Program

The Byte-Program instruction programs the bits in the selected

byte to the desired data. The selected byte must be in the erased

state (FFH) when initiating a Program operation. A Byte-Program

instruction applied to a protected memory area will be ignored.

Prior to any Write operation, the Write-Enable (WREN)

instruction must be executed. CE must remain active low for

the duration of the Byte-Program instruction. The Byte-Program

instruction is initiated by executing an 8-bit command, 02H,

followed by address bits [A23-A0]. Following the address, the data

is input in order from MSB (bit 7) to LSB (bit 0). CE must be

driven high before the instruction is executed. The user may poll

the Busy bit in the software status register or wait TBP for the

completion of the internal self-timed Byte-Program operation.

See Figure 4 for the Byte-Program sequence.

CE

MODE3

SCK MODE0

0 12 3 45 67 8

15 16 23 24 31 32 39

SI

02

ADD.

ADD.

ADD.

DIN

MSB

MSB

MSB LSB

HIGH IMPENANCE

SO

Figure 4 : BYTE-PROGRAM SEQUENCE

Elite Semiconductor Memory Technology Inc.

Publication Date: Jan. 2009

Revision: 1.6

10/30

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