FC40SA50FKP 데이터 시트보기 (PDF) - Vishay Semiconductors
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FC40SA50FKP Datasheet PDF : 10 Pages
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FC40SA50FKP
Vishay Semiconductors
Power MOSFET, 40 A
100000
10000
VGS = 0V, f = 1 MHZ
CCirssss
=
=
CCggsd+
Cgd,
Cds
SHORTED
Coss = Cds + Cgd
Ciss
1000
100
Coss
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
20
ID=40A
15
10
5
0
0
100
200
300
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
1000
100
TJ=150°C
10
1
TJ=25°C
VGS=0
0.1
0.2
0.7
1.2
1.7
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100us
10
TC = 25°C
TJ = 150°C
Single Pulse
1ms
10ms
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+
-
VDD
Fig. 10a - Switching Time Test Circuit
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For technical questions within your region, please contact one of the following: Document Number: 94542
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 12-May-10
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