FDS2570(2000) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS2570 Datasheet PDF : 8 Pages
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Typical Characteristics
30
VGS = 10V
25
5.0V
4.5V
20
15
4.0V
10
5
3.5V
0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
VGS = 4.0V
1.4
1.2
1
4.5V
5.0V
10V
0.8
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.6
ID = 4.3 A
2.2
VGS = 10 V
1.8
1.4
1
0.6
0.2
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
15
VDS = 10 V
10
5
TA = 125oC
25oC
-55oC
0
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
0.2
0.16
0.12
0.08
TA = 125oC
ID = 2.2 A
TA = 25oC
0.04
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
TA = 125oC
0.1
0.01
0.001
25oC
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS2570 Rev B(W)
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