FDS2570(2000) 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
FDS2570 Datasheet PDF : 8 Pages
| |||
Typical Characteristics
10
ID = 4.3 A
8
6
VDS = 25 V
75
50 V
4
2
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
0.1
0.01
0.001
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.1
1
100us
1ms
10ms
100ms
1s
10s
DC
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
3000
2500
2000
CISS
f = 1MHz
VGS = 0 V
1500
1000
500
CRSS
0
0 10
COSS
20 30 40 50 60 70 80
VDS, DRAIN TO SOURCE VOLTAGE (V)
90 100
Figure 8. Capacitance Characteristics.
80
SINGLE PULSE
RθJA = 125 °C/W
60
TA = 25°C
40
20
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS2570 Rev B(W)
Share Link: 