FDS2570 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS2570 Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 75 V,
IAR
Maximum Drain-Source Avalanche
Current
ID = 4.4 A
375 mJ
4.4
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
150
ID = 250 µA, Referenced to 25°C
VDS = 120 V,
VGS = 20 V,
VGS = –20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
V
150
mV/°C
1
µA
100 NA
–100 NA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
ID = 4 A
VGS = 6 V,
ID = 3.8 A
VGS = 10 V, ID = 4 A, TJ = 125°C
VGS = 10 V,
VDS = 10 V
30
VDS = 10 V,
ID = 4 A
2.6
4
V
-7
mV/°C
60 80
63
90
mΩ
120 158
A
20
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 75 V,
f = 1.0 MHz
V GS = 0 V,
1907
PF
117
PF
33
PF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 75 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 75 V,
VGS = 10 V
ID = 4 A,
12 19
Ns
7
14
Ns
41 65
Ns
21 34
Ns
39
62
NC
7
NC
9
NC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.1 A (Note 2)
2.1
A
0.7 1.2
V
FDS2570 Rev C(W)
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