FDS2670(2000) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS2670 Datasheet PDF : 8 Pages
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Typical Characteristics
20
VGS = 10V
15
6.5V
6.0V
10
5
5.5V
0
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
VGS = 5.5V
1.4
1.2
1
6.0V
6.5V
10.0V
0.8
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.5
ID = 3.0A
VGS = 10V
2
1.5
1
0.5
0
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.4
ID = 1.5 A
0.3
0.2
TA = 125oC
0.1
TA = 25oC
0
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
VDS = 15V
24
18
TA = 125oC
12
25oC
6
-55oC
0
3
4
5
6
7
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
TA = 125oC
25oC
-55oC
0.01
0.001
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS2670 Rev B(W)
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